? semiconductor components industries, llc, 2001 january, 2001 rev. 0 1 publication order number: NTQS6466/d NTQS6466 product preview power mosfet 6.8 amps, 20 volts nchannel tssop8 features ? new low profile tssop8 package ? ultra low r ds(on) ? higher efficiency extending battery life ? logic level gate drive ? diode exhibits high speed, soft recovery ? avalanche energy specified ? i dss and v ds(on) specified at elevated temperatures applications ? power management in portable and batterypowered products, i.e.: computers, printers, pcmcia cards, cellular and cordless telephones ? lithium ion battery applications ? note book pc maximum ratings (t c = 25 c unless otherwise noted) rating symbol 10 secs steady state unit draintosource voltage v ds 20 vdc gatetosource voltage v gs 12 dc continuous drain current t j = 150 c (note 1.) t a = 25 c t a = 70 c i d 8.1 6.6 6.8 5.4 adc pulsed drain current (10 m s pulse width) i dm 30 apk continuous source current (diode conduction) (note 1.) i s 1.35 0.95 adc maximum power dissipation (note 1.) t a = 25 c t a = 70 c p d 1.5 1.0 1.05 0.67 w operating junction and storage temperature range t j , t stg 55 to +150 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 50 v, i l = 7.7 apk, l = 44 mh) e as 1.36 j 1. surface mounted to 1 x 1 fr4 board. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. d s g nchannel device package shipping ordering information NTQS6466 tssop8 100 units/rail tssop8 case 948s plastic 1 pin assignment http://onsemi.com 8 2 d s s g 3 4 1 7 6 5 8d s s d top view NTQS6466r2 tssop8 3000/tape & reel 466 yww x 6.8 amperes 20 volts r ds(on) = 17 m w marking diagram y = year ww = work week x = mosfet
NTQS6466 http://onsemi.com 2 thermal resistance ratings rating symbol typical max unit maximum junctiontoambient (note 2.) t 10 sec steady state r q ja 65 100 83 120 c/w maximum junctiontofoot steady state r q jf 43 52 c/w electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit static gate threshold voltage (v ds = v gs , i d = 250 m a) v gs(th) 0.45 0.9 vdc gatebody leakage (v ds = 0 vdc, v gs = 8 vdc) i gss 100 nadc zero gate threshold voltage drain current (v ds = 16 vdc, v gs = 0 vdc) (v ds = 16 vdc, v gs = 0 vdc, t j = 70 c) i dss 1.0 10 ma dc onstate drain current (note 3.) (v ds = 5.0 vdc, v gs = 4.5 vdc) i d(on) 20 adc drainsource onstate resistance (note 3.) (v gs = 4.5 vdc, i d = 8.1 adc) (v gs = 2.5 vdc, i d = 6.6 adc) r ds(on) 0.014 0.017 0.017 0.020 w forward transconductance (v ds = 10 vdc, i d = 8.1 adc) (note 3.) g fs 30 s diode forward voltage (i s = 1.35 adc, v gs = 0 vdc (note 3.) v sd 0.65 1.1 vdc dynamic (note 4.) total gate charge (v ds = 10 vdc, q g 25 27 nc gatesource charge (v ds = 10 vdc , v gs = 5.0 vdc, i 81ad ) q gs 3.2 gatedrain charge gs i d = 8.1 adc) q gd 7.0 turnon delay time (v dd 10 vdc r l 10 w t d(on) 17 45 ns rise time (v dd = 10 vdc, r l = 10 w , i d @ 1.0 adc, t r 80 100 turnoff delay time i d @ 1 . 0 adc , v gen = 4.5 vdc, r g =60 w ) t d(off) 95 110 fall time r g = 6 . 0 w ) t f 90 100 sourcedrain reverse recovery time (i f = 1.5 adc, di/dt = 100 a/ m s) t rr 28 70 ns 2. surface mounted to 1 x 1 fr4 board. 3. pulse test: pulse width 300 m s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
NTQS6466 http://onsemi.com 3 package dimensions dim min max min max inches millimeters a 2.90 3.10 0.114 0.122 b 4.30 4.50 0.169 0.177 c --- 1.10 --- 0.043 d 0.05 0.15 0.002 0.006 f 0.50 0.70 0.020 0.028 g 0.65 bsc 0.026 bsc l 6.40 bsc 0.252 bsc m 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash. protrusions or gate burrs. mold flash or gate burrs shall not exceed 0.15 (0.006) per side. 4. dimension b does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25 (0.010) per side. 5. terminal numbers are shown for reference only. 6. dimension a and b are to be determined at datum plane -w-. seating plane pin 1 1 4 85 detail e b c d a g l 2x l/2 u s u 0.20 (0.008) t s u m 0.10 (0.004) v s t 0.076 (0.003) t v w 8x ref k ident k 0.19 0.30 0.007 0.012 s u 0.20 (0.008) t p1 p detail e f m 0.25 (0.010) ??? ??? k1 k jj1 section nn j 0.09 0.20 0.004 0.008 k1 0.19 0.25 0.007 0.010 j1 0.09 0.16 0.004 0.006 p --- 2.20 --- 0.087 p1 --- 3.20 --- 0.126 n n tssop8 case 948s01 issue o
NTQS6466 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. NTQS6466/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
|
